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| inchange semiconductor product specification silicon npn darligton power transistors bd675/bd677/BD679 description ? ? with to-126 package ? complement to type bd676/678/680 ? darlington ?high dc current gain applications ? for use as output devices in complementary general?purpose amplifier applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit bd675 45 bd677 60 v cbo collector-base voltage BD679 open emitter 80 v bd675 45 bd677 60 v ceo collector-emitter voltage BD679 open base 80 v v ebo emitter -base voltage open collector 5 v i c collector current 4 a i cm collector current-peak 7 a i b base current 0.1 a p c collector power dissipation t c =25 ?? 40 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? thermal characteristics symbol parameter value unit r th j-a thermal resistance from junction to ambient 100 k/w r th j-mb thermal resistance from junction to mounting base 3.12 k/w
inchange semiconductor product specification 2 silicon npn darligton power transistors bd675/bd677/BD679 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit bd675 45 bd677 60 v (br)ceo collector-emitter breakdown voltage BD679 i c =100ma; i b =0 80 v bd675 45 bd677 60 v (br)cbo collector-base breakdown voltage BD679 i c =1ma; i e =0 80 v v (br)ebo emitter-base breakdown voltage i e =5ma; i c =0 5 v v cesat collector-emitter saturation voltage i c =1.5a; i b =30ma 2.5 v v be(on) base-emitter on voltage i c =1.5a ; v ce =3v 2.5 v i cbo collector cut-off current v cb =rated bv cbo ; i e =0 t a =100 ?? 0.2 2.0 ma i ceo collector cut-off current v ce =1/2rated bv ceo ; i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 5.0 ma h fe dc current gain i c =1.5a ; v ce =3v 750 inchange semiconductor product specification 3 silicon npn darligton power transistors bd675/bd677/BD679 package outline fig.2 outline dimensions |
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